STP33N65M2 datasheet(3/23 Pages) STMICROELECTRONICS

3 / 23 page

DocID027286 Rev 1

3/23

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

D2PAK, TO-220,

I2PAK

TO-220FP

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

24(1)

Current limited by package.

Drain current (continuous) at TC = 100 °C

15(1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

190

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s; TC=25 °C)

2500

dv/dt (3)

ISD ≤ 24 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V

Peak diode recovery voltage slope

V/ns

dv/dt(4)

VDS ≤ 520 V

MOSFET dv/dt ruggedness

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D2PAK TO-220FP TO-220 I2PAK

Rthj-case

Thermal resistance junction-case max

0.66

3.68

0.66

°C/W

Rthj-pcb

(1)

When mounted on 1 inch² FR-4, 2 Oz copper board

Thermal resistance junction-pcb max

°C/W

Rthj-amb

Thermal resistance junction-ambient

max

62.5

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax)

2.5

EAS

Single pulse avalanche energy

(starting Tj=25°C, ID= IAR; VDD=50 V)

780

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