| Electronic Components Datasheet Search |
|
STP33N65M2 Datasheet(PDF) 5 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STP33N65M2 Datasheet(HTML) 5 Page - STMicroelectronics |
|
5 / 23 page ![]() DocID027286 Rev 1 5/23 STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 Electrical characteristics 23 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 24 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 96 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage VGS = 0 V, ISD = 24 A - 1.6 V trr Reverse recovery time ISD = 24 A, di/dt = 100 A/µs VDD = 60 V (see Figure 18) - 426 ns Qrr Reverse recovery charge - 7 µC IRRM Reverse recovery current - 33.5 A trr Reverse recovery time ISD = 24 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 18) - 544 ns Qrr Reverse recovery charge - 10 µC IRRM Reverse recovery current - 36.5 A |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |