STP9N60M2 datasheet(3/21 Pages) STMICROELECTRONICS

3 / 21 page

DocID024399 Rev 2

3/21

STD9N60M2, STP9N60M2, STU9N60M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

± 25

Drain current (continuous) at T

= 25 °C

5.5

Drain current (continuous) at T

= 100 °C

3.6

(1)

Pulse width limited by safe operating area..

Drain current (pulsed)

TOT

Total dissipation at T

= 25 °C

dv/dt

(2)

≤ 5.5 A, di/dt ≤ 400 A/μs; V

DS peak

< V

(BR)DSS

, V

=400 V

Peak diode recovery voltage slope

V/ns

dv/dt

(3)

DS ≤

480 V

MOSFET dv/dt ruggedness

stg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

Table 3. Thermal data

Symbol

Parameter

Value

Unit

DPAK

TO-220

IPAK

thj-case

Thermal resistance junction-case max

2.08

°C/W

thj-pcb

Thermal resistance junction-pcb max

(1)

When mounted on 1 inch² FR-4, 2 Oz copper board

°C/W

thj-amb

Thermal resistance junction-ambient max

100

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetetive or not repetetive

(pulse width limited by T

jmax

)

Single pulse avalanche energy (starting T

=25°C,

= I

; V

=50)

105

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