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STP9N60M2 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STP9N60M2
Description  Extremely low gate charge
PDF  21 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP9N60M2 Datasheet(HTML) 5 Page - STMicroelectronics

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DocID024399 Rev 2
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STD9N60M2, STP9N60M2, STU9N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain current
-
5.5
A
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
22
A
V
SD
(2)
2.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 5.5 A, V
GS
= 0
-
1.6
V
t
rr
Reverse recovery time
I
SD
= 5.5 A, di/dt = 100 A/μs
V
DD
= 60 V (see
Figure 18)
-
265
ns
Q
rr
Reverse recovery charge
-
1.65
μC
I
RRM
Reverse recovery current
-
12.5
A
t
rr
Reverse recovery time
I
SD
= 5.5 A, di/dt = 100 A/μs
V
DD
= 60 V, T
j
= 150 °C
(see
Figure 18)
-
377
ns
Q
rr
Reverse recovery charge
-
2.3
μC
I
RRM
Reverse recovery current
-
12.2
A



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