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STD40P3LLH6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD40P3LLH6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() March 2016 DocID025821 Rev 4 1/16 This is information on a product in full production. www.st.com STD40P3LLH6 P-channel - 30 V, 12 mΩ typ., -40 A STripFET™ H6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID STD40P3LLH6 -30 V 15 mΩ -40 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STD40P3LLH6 40P3LLH6 DPAK Tape and reel AM11258v1 D(2, TAB) S(3) G(1) |
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