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STF6N80K5 Datasheet(PDF) 7 Page - STMicroelectronics |
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STF6N80K5 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 15 page ![]() DocID024664 Rev 4 7/15 STF6N80K5, STFI6N80K5 Electrical characteristics 15 Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Normalized V(BR)DSS vs temperature Figure 13. Source-drain diode forward characteristics C 100 10 1 0.1 0.1 10 VDS(V) (pF) 1 100 Ciss Coss Crss 1000 f = 1 MHz AM18119v1 Eoss 2 1 0 0 VDS(V) (µJ) 400 200 3 600 4 AM18120v1 1.1 0.8 0.6 0.4 TJ(°C) 0.5 0.7 0.9 1 1.2 -100 0 -50 100 50 150 VGS(th) (norm) AM18082v2 ID=100 µA 1.5 1 0.5 0 -100 0 TJ(°C) -50 2 100 50 150 ID=2 A 2.5 VGS=10 V RDS(on) (norm) AM18081v2 V(BR)DSS -100 0 TJ(°C) (norm) -50 50 100 0.85 0.9 0.95 1 1.05 1.1 ID=1mA AM18083v1 VSD 1 3 ISD(A) (V) 2 4 0.55 0.65 0.75 0.85 TJ=-50°C TJ=150°C TJ=25°C 0.95 AM18121v1 |
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