LET9060F datasheet(3/9 Pages) STMICROELECTRONICS

Part #	LET9060F

Description	RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

PDF	9 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 9 page

LET9060F

Electrical characteristics

Doc ID 16863 Rev 3

3/9

Electrical characteristics

TC = 25 °C

Table 4.

Static

Symbol

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

VGS = 0 V; IDS = 10 mA

IDSS

VGS = 0 V; VDS = 28 V

µA

IGSS

VGS = 5 V; VDS = 0 V

µA

VGS(Q)

VDS = 28 V; ID = 100 mA

2.0

5.0

VDS(ON)

VGS = 10 V; ID = 3 A

0.8

1.2

GFS

VDS = 10 V; ID = 3 A

2.5

mho

CISS

VGS = 0 V; VDS = 28 V; f = 1 MHz

COSS

VGS = 0 V; VDS = 28 V; f = 1 MHz

CRSS

VGS = 0 V; VDS = 28 V; f = 1 MHz

1.2

Table 5.

Dynamic

Symbol

Test conditions

Min.

Typ.

Max.

Unit

POUT

VDD = 28 V; IDQ = 400 mA; PIN = 1.5 W; f = 945 MHz

GPS

VDD = 28 V; IDQ = 400 mA; POUT = 60 W; f = 945 MHz

VDD = 28 V; IDQ = 400 mA; PIN = 1.5 W; f = 945 MHz

Load

mismatch

VDD = 35 V; IDQ = 400 mA; POUT = 100 W; f = 945 MHz

All phase angles

20:1

VSWR

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