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STFILED625 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STFILED625
Description  N-channel 620 V, 1.28 Ω typ., 5.0 A Power MOSFET in I2PAKFP and TO-220 packages
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFILED625 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID024425 Rev 1
3/15
STFILED625, STPLED625
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
I2PAKFP
TO-220
VDS
Drain- source voltage
620
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
5.0(1)
1.
Limited only by maximum temperature allowed
5.0
A
ID
Drain current (continuous) at TC = 100 °C
3.5(1)
3.5
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
20.0(1)
20.0
A
PTOT
Total dissipation at TC = 25 °C
70
25
W
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
4.2
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
120
mJ
dv/dt(3)
3.
ISD ≤ ID, peak VDS ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
12
V/ns
di/dt(3)
Diode reverse recovery current slope
400
A/µs
VISO
Insulation withstand voltage (AC)
2500
V
TJ
Tstg
Operating junction temperature
Storage temperature
- 55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
I²PAKFP
TO-220
Rthj-case Thermal resistance junction-case max
5
1.79
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.50
°C/W
Obsolete
Product(s)
- Obsolete
Product(s)



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