STL2N80K5 datasheet(4/17 Pages) STMICROELECTRONICS

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Electrical characteristics

STL2N80K5

4/17

DocID025104 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 1 mA

800

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 800 V

µA

VDS = 800 V, TC=125 °C

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 20 V

± 10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source

on- resistance

VGS = 10 V, ID = 1 A

3.7

4.5

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0, VDS = 100 V,

f = 1 MHz

105

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-0.5

Co(tr)

(1)

1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging

time as Coss when VDS increases from 0 to 80% VDSS

Equivalent

capacitance time

VGS = 0, VDS = 0 to 640 V

-16

Co(er)

(2)

2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored

energy as Coss when VDS increases from 0 to 80% VDSS

Equivalent

capacitance energy

-7

Intrinsic gate

resistance

f = 1 MHz, ID=0

Ω

Total gate charge

VDD = 640 V, ID = 2 A,

VGS = 10 V

(see Figure 16)

-9.5

Qgs

Gate-source charge

1.5

Qgd

Gate-drain charge

7.5

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