DocID025104 Rev 2

5/17

STL2N80K5

Electrical characteristics

17

The built-in back-to-back Zener diodes have specifically been designed to enhance the

device's ESD capability. In this respect the Zener voltage is appropriate to achieve an

efficient and cost-effective intervention to protect the device's integrity. These integrated

Zener diodes thus avoid the usage of external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

Turn-on delay time

(see Figure 15),

(see Figure 20)

-8

-

ns

Rise time

-

12

-

ns

Turn-off delay time

-

19

-

ns

Fall time

-

32

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

1.5

A

Source-drain current (pulsed)

-

6

A

(1)

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

-

1.5

V

Reverse recovery time

-255

ns

Reverse recovery charge

-

1

µC

Reverse recovery current

-

8

A

Reverse recovery time

(see Figure 17)

-285

ns

Reverse recovery charge

-

1.45

µC

Reverse recovery current

-

7.5

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

30

-

-

V