STL8N6F7 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STL8N6F7

4/12

DocID028258 Rev 1

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0 V

IDSS

Zero gate voltage drain current

VGS = 0 V

VDS = 60 V

µA

IGSS

Gate-body leakage current

VGS = 20 V, VDS = 0 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 μA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 4 A

0.021

0.025

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Uni

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 V

450

Coss

Output capacitance

210

Crss

Reverse transfer capacitance

Total gate charge

VDD = 48 V, ID = 8 A,

VGS = 10 V

(see Figure 3: "Test circuit

for gate charge behavior"

)

Qgs

Gate-source charge

TBD

Qgd

Gate-drain charge

TBD

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Uni

td(on)

Turn-on delay time

VDD = 30 V, ID = 4 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 2: "Test circuit for

resistive load switching times"

)

TBD

Rise time

TBD

td(off)

Turn-off delay time

TBD

Fall time

TBD

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