This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

December 2014

DocID025076 Rev 2

1/14

STL8N10F7

N-channel 100 V, 0.017

Ω typ., 35 A, STripFET™ F7

Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package

Datasheet

Figure 1. Internal schematic diagram

Features

• Excellent figure of merit (FoM)

• High avalanche ruggedness

Applications

• Switching applications

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

PowerFLAT™ 3.3 x 3.3

1

2

3

4

D(5, 6, 7, 8)

G(4)

S(1, 2, 3)

8

12

3

4

7

6

5

AM15810v1

Order code

STL8N10F7

100 V

0.02

Ω

35 A

50 W

Table 1. Device summary

Order code

Marking

Package

Packaging

STL8N10F7

8N10F

PowerFLAT™ 3.3 x 3.3

Tape and reel

www.st.com