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STL8N10F7 Datasheet(PDF) 3 Page - STMicroelectronics |
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STL8N10F7 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() DocID025076 Rev 2 3/14 STL8N10F7 Electrical ratings 14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ± 20 V ID (1) 1. This value is rated according to Rthj-pcb. Drain current (continuous) at TC = 25 °C 8 A ID (1) Drain current (continuous) at TC = 100 °C 6 A IDM (1)(2) 2. Pulse width limited by safe operating area. Drain current (pulsed) 32 A ID (3) 3. This value is rated according to Rthj-case. Drain current (continuous) at Tpcb = 25 °C 35 A ID (3) Drain current (continuous) at Tpcb = 100 °C 22 A IDM (2)(3) Drain current (pulsed) 140 A PTOT (3) Total dissipation at Tcase = 25 °C 50 W PTOT (1) Total dissipation at Tpcb = 25 °C 3.5 W TJ Operating junction temperature -55 to 150 °C Tstg Storage temperature °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Thermal resistance junction-pcb 42.8 °C/W Rthj-case Thermal resistance junction-case 2.5 °C/W |
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