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STGP30M65DF2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STGP30M65DF2 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 16 page  April 2017 DocID027355 Rev 3 1/16 This is information on a product in full production. www.st.com STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features 6 µs of minimum short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 30 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packaging STGP30M65DF2 G30M65DF2 TO-220 Tube 1 2 3 TO-220 TAB |
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Similar Description - STGP30M65DF2 |
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