STGP30M65DF2 datasheet(3/16 Pages) STMICROELECTRONICS

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STGP30M65DF2

Electrical ratings

DocID027355 Rev 3

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Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0 V)

650

Continuous collector current at TC = 25 °C

Continuous collector current at TC = 100 °C

ICP(1)

Pulsed collector current

120

VGE

Gate-emitter voltage

±20

Continuous forward current at TC = 25 °C

Continuous forward current at TC = 100 °C

IFP(1)

Pulsed forward current

120

PTOT

Total dissipation at TC = 25 °C

258

TSTG

Storage temperature range

-55 to 150

°C

Operating junction temperature range

-55 to 175

°C

Notes:

(1)Pulse width limited by maximum junction temperature.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

0.58

°C/W

RthJC

Thermal resistance junction-case diode

1.47

°C/W

RthJA

Thermal resistance junction-ambient

62.5

°C/W

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