STGW40H120DF2 datasheet(7/17 Pages) STMICROELECTRONICS

Part #	STGW40H120DF2

Description	Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

PDF	17 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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7 / 17 page

STGW40H120DF2, STGWA40H120DF2

Electrical characteristics

DocID023753 Rev 5

7/17

Figure 8: Collector current vs. switching

frequency

Figure 9: Forward bias safe operating area

Figure 10: Transfer characteristics

Figure 11: Diode VF vs. forward current

Figure 12: Normalized VGE(th) vs. junction

temperature

Figure 13: Normalized V(BR)CES vs. junction

temperature

Ic [A]

f [kHz]

Ω

rectangular current shape,

(duty cycle=0.5, V

CC = 600V, R =10

GE = 0/15 V, TJ =175°C)

Tc=80° C

Tc=100 °C

100

120

GIPG130320141328FSR

0.1

VCE(V)

(A)

10 µs

100 µs

1 ms

Single pulse

Tc= 25°C, TJ<= 175°C

VGE= 15V

100

1000

1 µs

GIPG130320141339FSR

TJ=175°C

TJ=25°C

VGE(V)

(A)

100

120

140

VCE=10V

GIPG130320141348FSR

VGE(th)

1.1

1.0

0.6

-50

TJ(°C)

(norm)

100

150

IC= 2mA

VCE= VGE

0.7

0.8

0.9

GIPG130320141400FSR

V(BR)CES

0.98

0.94

0.9

-50

TJ(°C)

(norm)

100

150

IC= 2mA

1.06

1.02

GIPG130320141405FSR

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