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STGW60V60F Datasheet(PDF) 5 Page - STMicroelectronics

Part # STGW60V60F
Description  Low thermal resistance
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW60V60F Datasheet(HTML) 5 Page - STMicroelectronics

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DocID024701 Rev 2
5/14
STGW60V60F
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
(1)
Turn-on delay time
V
CE
= 400 V, I
C
= 60 A,
R
G
= 4.7
Ω, V
GE
= 15 V
,
see
Figure 22
-60-
ns
t
r
(1)
Current rise time
-
20
-
ns
(di/dt)
on
(1)
Turn-on current slope
-
2365
-
A/μs
t
d(off)
Turn-off delay time
-
208
-
ns
t
f
Current fall time
-
14
-
ns
E
on
(1)
1.
Switching-on times and energy have been calculated applying the STGW60V60DF's co-pack diode in the
high side of the test circuit in Figure 22. Both IGBT and diode are at the same temperature. Energy losses
include reverse recovery of the diode.
Turn-on switching losses
-
0.75
-
mJ
E
off
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
0.55
-
mJ
E
ts
Total switching losses
-
1.3
-
mJ
t
d(on)
(1)
Turn-on delay time
V
CE
= 400 V, I
C
= 60 A
,
R
G
= 4.7
Ω, V
GE
= 15 V,
T
J
= 175 °C, see
Figure 22
-57-
ns
t
r
(1)
Current rise time
-
23
-
ns
(di/dt)
on
(1)
Turn-on current slope
-
2191
-
A/μs
t
d(off)
Turn-off delay time
-
216
-
ns
t
f
Current fall time
-
27
-
ns
E
on
(1)
Turn-on switching losses
-
1.5
-
mJ
E
off
(2)
Turn-off switching losses
-
0.8
-
mJ
E
ts
Total switching losses
-
2.3
-
mJ



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