STL9P2UH7 datasheet(1/14 Pages) STMICROELECTRONICS

Part #	STL9P2UH7

Description	P-channel 20 V, 0.0195 Ω typ., 9 A STripFET™ H7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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October 2014

DocID025141 Rev 3

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This is information on a product in full production.

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STL9P2UH7

P-

channel 20 V, 0.0195 Ω typ., 9 A STripFET™ H7

Power MOSFET in a PowerFLAT™ 3.3x3.3 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on)max

ID

STL9P2UH7

20 V

0.0225 Ω @ 4.5 V

9 A



Very low on-resistance



Very low capacitance and gate charge



High avalanche ruggedness

Applications



Switching applications

Description

This P-channel Power MOSFET utilizes the

STripFET H7 technology with a trench gate

structure combined with extremely low on-

resistance. The device also offers ultra-low

capacitances for higher switching frequency

operations.

Table 1: Device summary

Order code

Marking

Package

Packaging

STL9P2UH7

9P2H7

PowerFLAT™

3.3x3.3

Tape and

reel

For the P-channel Power MOSFET the

actual polarity of the voltages and the

current must be reversed.

1

2

3

4

PowerFLA

T™ 3.3x3.3

D(5, 6, 7, 8)

G(4)

S(1, 2, 3)

8

1

2

3

4

7

6

5

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