STL9P2UH7

Electrical ratings

DocID025141 Rev 3

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1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain-source voltage

20

V

Gate-source voltage

± 8

V

ID

(1)

9

A

ID

(1)

5.9

A

IDM

(2)

Drain current (pulsed)

36

A

(1)

2.9

W

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Notes:

(1)

The value is rated according to R thj-pcb

(2)

Pulse width limited by safe operating area

Table 3: Thermal resistance

Symbol

Parameter

Value

Unit

Thermal resistance junction-case

2.5

°C/W

(1)

Thermal resistance junction-pcb

42

°C/W

Notes:

(1)

When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.

For the P-channel Power MOSFET the actual polarity of the voltages and the

current must be reversed.