STL13N65M2 datasheet(5/16 Pages) STMICROELECTRONICS

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DocID027319 Rev 1

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STL13N65M2

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 5 A,

RG =4.7 Ω, VGS =10 V

(see Figure 14 and 19)

-11

Rise time

7.8

td(off)

Turn-off delay time

Fall time

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

ISD

Source-drain current

6.5

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current (pulsed)

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

VGS = 0 V, ISD = 6.5 A

1.6

trr

Reverse recovery time

ISD = 10 A, di/dt = 100 A/µs,

VDD =60V (see Figure 16)

-312

Qrr

Reverse recovery charge

2.7

µC

IRRM

Reverse recovery current

17.5

trr

Reverse recovery time

ISD = 10 A, di/dt = 100 A/µs,

VDD =60V, Tj =150 °C

(see Figure 16)

-464

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

17.5

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