STL60N32N3LL datasheet(1/14 Pages) STMICROELECTRONICS

Part #	STL60N32N3LL

Description	Dual N-channel 30 V, 0.005 Ω, 15 A PowerFLAT™ 5x6 asymmetrical double island, STripFET™ Power MOSFET

PDF	14 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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February 2012

Doc ID 17266 Rev 3

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14

STL60N32N3LL

Dual N-channel 30 V, 0.005

Ω, 15 A PowerFLAT™ 5x6

asymmetrical double island, STripFET™ Power MOSFET

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses

Application

■ Switching applications

Description

This device is a dual N-channel Power MOSFET

which utilizes the latest generation of design rules

for ST's proprietary STripFET™ V and

STripFET™ VI DeepGATE™ technology. The

lowest available RDS(on)* Qg in this chip scale

package renders the device suitable for the most

demanding DC-DC converter applications, where

high power density is required.

Figure 1.

Internal schematic diagram

Order code

VDSS

RDS(on)

ID

STL60N32N3LL

Q1

30 V

< 0.0092

Ω 13.6 A

Q2

30 V

< 0.0055

Ω 15 A

PowerFLAT™5x6 asymmetrical

double island

1

2

3

4

8

7

6

5

D1

S1/D2

G1

G2

S2

(top view)

Table 1.

Device summary

Order code

Marking

Package

Packaging

STL60N32N3LL

60N32N3LL

PowerFLAT™5x6

asymmetrical double island

Tape and reel

www.st.com

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STL60N32N3LL Datasheet(PDF) 1 Page - STMicroelectronics

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