STL60N32N3LL datasheet(5/14 Pages) STMICROELECTRONICS

Part #	STL60N32N3LL

Description	Dual N-channel 30 V, 0.005 Ω, 15 A PowerFLAT™ 5x6 asymmetrical double island, STripFET™ Power MOSFET

PDF	14 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 14 page

STL60N32N3LL

Electrical characteristics

Doc ID 17266 Rev 3

5/14

Table 6.

Switching times

Symbol

Parameter

Test conditions

Type

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD=15 V, ID=7.5 A,

RG=4.7 Ω,

VGS= 4.5 V

(see Figure 29)

10.8

9.5

15.6

td(off)

Turn-off delay time

Fall time

VDD=15 V, ID=7.5 A,

RG=4.7 Ω,

VGS= 4.5V

(see Figure 29)

14.2

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Type

Min.

Typ.

Max.

Unit

ISD

Source-drain current

VDD=15 V, ID=7.5 A

RG=4.7 Ω,

VGS=4.5 V

13.6

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current

(pulsed)

VDD=15 V, ID= 7.5 A

RG=4.7 Ω,

VGS=4.5 V

54.4

VSD

(2)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 15 A, VGS = 0

1.1

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 15 A,

VDD = 15 V

di/dt = 100 A/µs,

Tj = 150°C

(see Figure 29)

16.8

1.4

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