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STL90N3LLH6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL90N3LLH6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() This is information on a product in full production. September 2013 DocID15573 Rev 4 1/16 STL90N3LLH6 N-channel 30 V, 0.0038 Ω typ., 24 A STripFET™ VI DeepGATE™ Power MOSFET in PowerFLAT™ 5x6 package Datasheet - production data Figure 1. Internal schematic diagram Features • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses • Very low switching gate charge Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 1 2 3 4 PowerFLAT™5x6 AM15540v2 5 6 7 8 12 3 4 Top View D(5, 6, 7, 8) G(4) S(1, 2, 3) Order code VDS RDS(on) max. ID STL90N3LLH6 30 V 0.0045 Ω 24 A (1) 1. The value is rated according Rthj-pcb Table 1. Device summary Order code Marking Packages Packaging STL90N3LLH6 90N3LLH6 PowerFLAT™ 5x6 Tape and reel www.st.com |
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