STU13N65M2 datasheet(3/16 Pages) STMICROELECTRONICS

Part #	STU13N65M2

Description	N-channel 650 V, 0.37 Ω typ.,10 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages

PDF	16 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 16 page

DocID026894 Rev 1

3/16

STP13N65M2, STU13N65M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

6.3

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

110

dv/dt(2)

ISD ≤ 10 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD= 400 V

Peak diode recovery voltage slope

V/ns

dv/dt(3)

VDS ≤ 520 V

MOSFET dv/dt ruggedness

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

Table 3. Thermal data

Symbol

Parameter

Value

Unit

TO-220

IPAK

Rthj-case

Thermal resistance junction-case max

1.14

°C/W

Rthj-amb

Thermal resistance junction-ambient

max

62.5

100

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax)

1.8

EAS

Single pulse avalanche energy (starting

Tj =25 °C, ID =IAR; VDD =50V)

350

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