STU13N65M2 datasheet(4/16 Pages) STMICROELECTRONICS

4 / 16 page

Electrical characteristics

STP13N65M2, STU13N65M2

4/16

DocID026894 Rev 1

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0 V, ID = 1 mA

650

IDSS

Zero gate voltage

drain current

VGS = 0 V, VDS = 650 V

µA

VGS = 0 V, VDS =650 V,

TC =125 °C

100

µA

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ± 25 V

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 5 A

0.37

0.43

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS =0 V

-590

Coss

Output capacitance

27.5

Crss

Reverse transfer

capacitance

-1.1

Coss eq

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS

Equivalent output

capacitance

VGS =0 V, VDS = 0 to 520 V

168.5

Intrinsic gate

resistance

f = 1 MHz open drain

6.5

Ω

Total gate charge

VDD =520 V, ID =10 A,

VGS =10V, (see Figure 17)

-17

Qgs

Gate-source charge

3.3

Qgd

Gate-drain charge

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD =325 V, ID = 5 A,

RG =4.7 Ω, VGS =10V

(see Figure 16 and Figure 21)

-11

Rise time

7.8

td(off)

Turn-off delay time

Fall time

STU13N65M2 Datasheet(PDF) 4 Page - STMicroelectronics

STU13N65M2 Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL