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STW13N60M2 Datasheet(PDF) 7 Page - STMicroelectronics

Part # STW13N60M2
Description  N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW13N60M2 Datasheet(HTML) 7 Page - STMicroelectronics

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DocID023937 Rev 5
7/18
STP13N60M2, STU13N60M2, STW13N60M2
Electrical characteristics
Figure 8. Normalized V(BR)DSS vs temperature
Figure 9. Static drain-source on-resistance
Figure 10. Gate charge vs gate-source voltage
Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage vs
temperature
Figure 13. Normalized on-resistance vs
temperature
V(BR)DSS
-50
TJ(°C)
(norm)
0
0.9
0.94
0.98
1.02
1.06
ID=1 mA
50
100
1.1
AM15714v1
RDS(on)
0.360
0.350
0.340
0.330
0
4
ID(A)
(
Ω)
2
6
0.370
8
10
VGS=10V
AM15715v1
VGS
6
4
2
0
0
Qg(nC)
(V)
8
8
4
10
VDD=480V
300
200
100
0
400
VDS
12
16
500
VDS
(V)
ID=11A
AM15716v1
C
10
1
0.1
0.1
10
VDS(V)
(pF)
1
100
Ciss
Coss
Crss
100
1000
AM15717v1
VGS(th)
0.9
0.8
0.7
0.6
TJ(°C)
(norm)
-50
1.0
ID=250µA
0
50
100
1.1
AM15718v1
RDS(on)
2.1
1.7
1.3
0.9
TJ(°C)
(norm)
0.5
-50
0
50
100
ID=5.5 A
VGS=10V
AM15719v1



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