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STW13N60M2 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STW13N60M2
Description  N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW13N60M2 Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
February 2014
DocID023937 Rev 5
1/18
18
STP13N60M2, STU13N60M2,
STW13N60M2
N-channel 600 V, 0.35
Ω typ., 11 A MDmesh II Plus™ low Q
g
Power MOSFETs in TO-220, IPAK and TO-247 packages
Datasheet
− production data
Figure 1. Internal schematic diagram
Features
• Extremely low gate charge
• Lower R
DS(on)
x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q
g
. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
AM15572v1
, TAB
TO-220
1
2
3
TAB
3
2
1
TAB
IPAK
1
2
3
TO-247
Order codes
VDS @ TJmax
RDS(on) max
ID
STP13N60M2
650 V
0.38
Ω
11 A
STU13N60M2
STW13N60M2
Table 1. Device summary
Order codes
Marking
Package
Packaging
STP13N60M2
13N60M2
TO-220
Tube
STU13N60M2
IPAK
STW13N60M2
TO-247
www.st.com


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