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STP90N6F6 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP90N6F6
Description  N-channel 60 V, 0.0057 Ω typ., 90 A STripFET™ F6 Power MOSFET in a TO-220 package
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP90N6F6 Datasheet(HTML) 3 Page - STMicroelectronics

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STP90N6F6
Electrical ratings
DocID025190 Rev 3
3/13
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
60
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25 °C
90
A
ID
Drain current (continuous) at TC= 100 °C
70
A
IDM
(1)
Drain current (pulsed)
360
A
PTOT
Total dissipation at TC = 25 °C
136
W
Tstg
Storage temperature
- 55 to 175
°C
Tj
Max. operating junction temperature
175
°C
Notes:
(1)
Pulse width limited by safe operating area.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max.
1.1
°C/W
Rthj-amb
Thermal resistance junction-ambient max.
62.5
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax)
45
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAV, VDD = 43 V)
152
mJ



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