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STP240N10F7 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP240N10F7 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() DocID023934 Rev 3 5/13 STP240N10F7 Electrical characteristics 13 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 110 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) -440 A VSD (2) 2. Pulse duration = 300µs, duty cycle 1.5% Forward on voltage VGS=0, ISD=110 A - 1.2 V trr Reverse recovery time ISD=110 A, di/dt = 100 A/µs, VDD=80 V, Tj=150°C (see Figure 15) -108 ns Qrr Reverse recovery charge - 315 nC IRRM Reverse recovery current - 5.8 A |
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