This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

December 2014

DocID024615 Rev 2

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STT4P3LLH6

P-Channel 30 V, 0.048

Ω typ., 4 A STripFET™ H6 DeepGATE™

Power MOSFET in an SOT23-6L package

Datasheet

Figure 1. Internal schematic diagram

Features

• Very low gate charge

• High avalanche ruggedness

• Low gate drive power loss

Applications

• Switching applications

Description

This device is a P-channel Power MOSFET

developed using the STripFET™ H6 technology

with a new trench gate structure. The resulting

packages.

Note:

For the P-channel MOSFET the actual polarity of the voltages and the current must be

reversed.

1

2

3

6

5

4

SOT23-6L

Order code

STT4P3LLH6

30 V

0.056

Ω at 10 V

4 A

Table 1. Device summary

Order code

Marking

Package

Packaging

STT4P3LLH6

4K3L

SOT23-6L

Tape and reel

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