STT4P3LLH6 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STT4P3LLH6

4/12

DocID024615 Rev 2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. Static

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

V(BR)DSS

Drain-source breakdown

Voltage (VGS = 0)

ID = 250 µA,

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 30 V

µA

VGS = 0 V, VDS =30V,

Tc = 125 °C

IGSS

Gate body leakage current

VDS = 0 V, VGS = ± 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source

on- resistance

VGS = 10 V, ID = 2 A

0.048

0.056

VGS = 4.5 V, ID = 2 A

0.075

0.09

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

Ciss

Input capacitance

VDS = 25 V, f=1 MHz,

VGS = 0

639

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-52

Total gate charge

VDD = 15 V, ID = 4 A

VGS = 4.5 V

-6

Qgs

Gate-source charge

1.9

Qgd

Gate-drain charge

2.1

Table 6. Switching times

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

td(on)

Voltage delay time

VDD = 15 V, ID = 2 A,

RG = 4.7 Ω, VGS = 10 V

-5.4

tr (V)

Voltage rise time

td (off)

Current fall time

19.2

Crossing time

3.4

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