 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
STT7P2UH7 Datasheet(PDF) 1 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STT7P2UH7 Datasheet(HTML) 1 Page - STMicroelectronics |
|
|
1 / 13 page  October 2014 DocID025142 Rev 3 1/13 This is information on a product in full production. www.st.com STT7P2UH7 P- channel 20 V, 0.0195 Ω typ., 7 A STripFET™ H7 Power MOSFET in a SOT23-6L package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID STT7P2UH7 20 V 0.0225 Ω @ 4.5 V 7 A Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications Switching applications Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low on- resistance. The device also offers ultra-low capacitances for higher switching frequency operations. Table 1: Device summary Order code Marking Package Packaging STT7P2UH7 7L2U SOT23-6L Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. SOT23-6L |
Similar Part No. - STT7P2UH7 |
|
Similar Description - STT7P2UH7 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
