STTH60W03CW datasheet(3/8 Pages) STMICROELECTRONICS

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STTH60W03C

Characteristics

Doc ID 023144 Rev 1

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Table 5.

Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IRM

Reverse recovery current

Tj = 125 °C

IF = 30 A, VR = 200 V

dIF/dt = -200 A/µs

QRR

Reverse recovery charge

180

Sfactor

Softness factor

0.3

trr

Reverse recovery time

Tj = 25 °C

IF = 1 A, VR = 30 V

dIF/dt = -100 A/µs

tfr

Forward recovery time

Tj = 25 °C

IF = 30 A, VFR = 1.5 V

dIF/dt = 200 A/µs

180

VFP

Forward recovery voltage

2.0

3.0

Figure 1.

Average forward power dissipation

versus average forward current

(per diode)

Figure 2.

Forward voltage drop versus

forward current (per diode)

F(AV)(W)

δ05

= 0.

δ1

= 0.

δ = 0.2

δ = 0.5

δ = 1

IF(AV)(A)

= tp/T

0.1

1.0

10.0

100.0

1000.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

FM(A)

Tj = 150 °C

(Maximum values)

Tj = 150 °C

(Typical values)

Tj = 25 °C

(Maximum values)

VFM(V)

Figure 3.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt (typical values, per

diode)

Zth(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp(s)

IRM(A)

100

150

200

250

300

350

400

450

500

F(AV)

V = 200 V

T = 125 °C

= I

dIF/dt(A/µs)

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