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STTH60W03CW Datasheet(PDF) 4 Page - STMicroelectronics |
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STTH60W03CW Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() Characteristics STTH60W03C 4/8 Doc ID 023144 Rev 1 Figure 5. Reverse recovery time versus dIF/dt (typical values, per diode) Figure 6. Reverse recovery charges versus dIF/dt (typical values, per diode) 0 10 20 30 40 50 60 70 80 90 100 0 50 100 150 200 250 300 350 400 450 500 trr(ns) I= I V = 200 V T = 125 °C F F(AV) R j dIF/dt(A/µs) 0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350 400 450 500 QRR(nC) dIF/dt(A/µs) I= I V = 200 V T = 125 °C F F(AV) R j Figure 7. Relative variations of dynamic parameters versus junction temperature Figure 8. Reverse recovery softness factor versus dIF/dt (typical values, per diode) 0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 Tj (°C) IF = I F(AV) VR = 200 V Reference: Tj=125 °C IRM SFACTOR QRR S factor 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 50 100 150 200 250 300 350 400 450 500 I= I V = 200 V T = 125 °C FF(AV) R j dIF/dt(A/µs) |
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