STW56N65M2 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STW56N65M2

4/12

DocID027285 Rev 1

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

650

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

VDS = 650 V, TC = 125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

± 10

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 24.5 A

0.049

0.062

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

3900

Coss

Output capacitance

160

Crss

Reverse transfer

capacitance

-2.8

Co(er)

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent Output

Capacitance

VGS = 0, VDS = 0 to 520 V

838

Intrinsic gate

resistance

f = 1 MHz open drain

4.6

Ω

Total gate charge

VDD = 520 V, ID = 49 A,

VGS = 10 V, (see Figure 15)

-93

Qgs

Gate-source charge

Qgd

Gate-drain charge

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