STW56N65M2 datasheet(5/12 Pages) STMICROELECTRONICS

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STW56N65M2

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 24.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 16 and

Figure 19)

-19

Rise time

27.5

td(off)

Turn-off delay time

146

Fall time

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current (pulsed)

196

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 49 A, VGS = 0

1.6

trr

Reverse recovery time

ISD = 49 A,

di/dt = 100 A/µs

VDD = 60 V (see Figure 16)

554

Qrr

Reverse recovery charge

13.5

µC

IRRM

Reverse recovery current

49.5

trr

Reverse recovery time

ISD = 49 A,

di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 19)

688

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

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