2SC5773 datasheet(2/13 Pages) HITACHI

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2SC5773

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

CBO

Collector to emitter voltage

CEO

Emitter to base voltage

EBO

1.5

Collector current

Collector power dissipation

700*

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

* When using aluminium ceramic board (25 x 60 x 0.7 mm)

Electrical Characteristics (Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector to base breakdown

voltage

(BR)CBO

——V

C = 10µ A, IE = 0

Collector cutoff current

CBO

——

µAV

CB = 12 V, IE = 0

Collector cutoff current

CEO

——

CE = 6 V, RBE = ∞

Emitter cutoff current

EBO

——

µAV

EB = 1.5 V, IC = 0

DC current transfer ratio

120

160

CE = 5 V, IC = 50 mA

Collector output capacitance

Cob

—

1.25

1.8

CB = 5 V, IE = 0

f = 1 MHz

Reverse transfer capacitance Cre

—

0.98

—

CB = 5 V, IE = 0

f = 1 MHz

Gain bandwidth product

10.8

—

GHz

CE = 5 V, IC = 50 mA

f = 1 GHz

21 parameter

21|

—

CE = 5 V, IC = 50 mA

f = 1 GHz

Power gain

11.9

—

CE = 5 V, IC = 50 mA

f = 900 MHz

Noise figure

—

1.1

1.9

CE = 5 V, IC = 5 mA

f = 900 MHz

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