Bay Linear, Inc

2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556

www.baylinear.com

POWER MOSFET

IRF830

Advance Information

Ordering Information

Device

Package

Temp.

IRL830T

TO-220

0 to 150

°C

IRL830S

TO-263 ( D

0 to 150

°C

Absolute Maximum Rating

Parameter

Max

Unit

°°°°C

4.5

°°°°C

2.9

Pulsed Drain Current (1)

18

A

°°°°C

Power Dissipation

74

W

Linear Derating Factor

0.59

Linear Derating Factor ( PCB Mount, D

0.025

W/

°°°°C

Gate-to- Source Voltage

±20

V

Single Pulse Avalanche Energy (2)

280

mJ

Avalanche Current (1)

4.5

A

Repetitive Avalanche Energy (1)

7.4

mJ

dv/dt

Peak Diode Recovery dv/dt (3)

3.5

V/ns

Junction & Storage Temperature Range

−55 to +150

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

°°°°C

Thermal Resistance

Parameter

Min

Typ

Max

Units

Junction-to Case

-

-

1.7

Case-to-Sink, Flat, Greased Surface ( TO-220)

-

0.50

Junction-to Ambient ( PCB Mount, D

40

Junction-to Ambient

-

-

62

°°°°C/W

Description

The Bay Linear MOSFET’s provide the designers with the best

combination of fast switching, ruggedized device design, low

0n-resistance and low cost-effectiveness.

The TO-220 is offered in a 3-pin is universally preferred for all

commercial-industrial applications at power dissipation level

to approximately to 50 watts. Also, available in a D

mount power package with a power dissipation up to 2 Watts

Features

• Dynamic dv/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

Bay Linear

Bay Linear

Bay Linear

Bay Linear

Linear Excellence