Bay Linear, Inc

2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556

www.baylinear.com

IRF830

°°°°C unless otherwise specified)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Drain-to-source Breakdown

Voltage

500

V

∆∆∆∆T

J

Breakdown Voltage

Temperature Coefficient

Reference to 25

°C,

-

0.61

-

V/

°°°°C

On-State Drain Current

(note 2)

4.5

A

Static Drain-to-Source

On-Resistance

(note 4)

1.5

Ω

Ω

Ω

Ω

Gate Threshold Voltage

2.0

-

4.0

V

Forward Transconductance

2.5

-

-

S

25

Drain-to-Source Leakage

Current

-

-

250

µµµµA

Gate-to-Source Forward

Leakage

100

Gate-to-Source Reverse

Leakage

-

-

-100

nA

Total Gate Charge

-

-

38

Gate-to-Source Charge

-

-

5.0

Gate-to-Drain (“Miller”)

Charge

22

nC

Turn-On Delay Time

-

8.2

-

Rise Time

-

16

-

Turn -Off Delay Time

-

42

-

Fall Time

-

16

-

ns

Internal Drain Inductance

-

4.5

-

Internal Source Inductance

Between lead 6mm (0.25in.)

from package and center or die

contact

-

7.5

-

nH

Input Capacitance

-

610

-

Output Capacitance

-

160

-

Reverse Transfer Capacitance

F = 1.0MHZ

-

68

-

pF

Source-Drain Rating Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Continuous Source Current

(Body Diode)

-

-

4.5

Pulsed Source Current

(Body Diode) (Note 1)

MOSFET symbol showing the

integral reverse p-n junction

diode.

-

-

18

A

°

-

-

1.6

V

Reverse Recovery Time

-

320

640

ns

Reverse Recovery Charge

°

di/dt=100A/

µs (Note 4)

-

1.0

2.0

µµµµC

Forward Turn-On Time

Notes: 1. Repetitive Rating; pulse width limited by max. junction temperature.

°C, L = 24 mH R

Ω, I

≤ 4.5A, di/dt ≤ 75A/µs, V

DD

≤ V

≤ 150°C

4. Pulse with

≤ 300µs; duty cycle ≤ 2%