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MDIS1903TH Datasheet(PDF) 1 Page - MagnaChip Semiconductor.

Part # MDIS1903TH
Description  Single N-channel Trench MOSFET 100V, 12.8A, 105m(ohm)
PDF  6 Pages
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Manufacturer  MGCHIP [MagnaChip Semiconductor.]
Direct Link  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDIS1903TH Datasheet(HTML) 1 Page - MagnaChip Semiconductor.

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Jun 2011 Version 1.0
MagnaChip Semiconductor Ltd.
1
ㄹ
Absolute Maximum Ratings (Tc = 25
oC)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
(1)
TC=25
oC
ID
12.8
A
TC=70
oC
10.3
Pulsed Drain Current
IDM
40
A
Power Dissipation
TC=25
oC
PD
36.8
W
TC=70
oC
23.6
Single Pulse Avalanche Energy
(2)
EAS
21
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient
(1)
RθJA
52
oC/W
Thermal Resistance, Junction-to-Case
RθJC
3.4
MDIS1903
Single N-channel Trench MOSFET 100V, 12.8A, 105m
Ω
D
G
S
Features
VDS = 100V
ID = 12.8A @VGS = 10V
RDS(ON) (MAX)
< 105m
Ω @VGS = 10V
< 110m
Ω @VGS = 6.0V
General Description
The MDIS1903 uses advanced MagnaChip
’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality.
MDIS1903 is suitable device for DC to DC
converter and general purpose applications.
G
D
S


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