MDIS1903TH datasheet(2/6 Pages) MGCHIP

2 / 6 page

Jun 2011 Version 1.0

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

Rohs Status

MDIS1903TH

-55~150

TO-251-VS(IPAK)

Tube

Halogen Free

Electrical Characteristics (TJ =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

100

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

1.0

2.0

3.0

Drain Cut-Off Current

IDSS

VDS = 80V, VGS = 0V

μA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 10A

105

mΩ

VGS = 6.0V, ID = 10A

110

Forward Transconductance

gfs

VDS = 10V, ID = 10A

Dynamic Characteristics

Total Gate Charge

Qg(10V)

VDS = 50.0V, ID = 10A,

VGS = 10V

8.8

Gate-Source Charge

Qgs

1.7

Gate-Drain Charge

Qgd

2.3

Input Capacitance

Ciss

VDS = 25.0V, VGS = 0V,

f = 1.0MHz

475

800

Reverse Transfer Capacitance

Crss

Output Capacitance

Coss

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 50V,

ID = 10A , RG = 3.0Ω

6.8

Rise Time

10.6

Turn-Off Delay Time

td(off)

16.2

Fall Time

5.5

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 10A, VGS = 0V

0.75

1.2

Body Diode Reverse Recovery Time

trr

IF = 10A, dl/dt = 100A/μs

42.0

Body Diode Reverse Recovery Charge

Qrr

69.0

Note :

Surface mounted FR-4 board by JEDEC (jesd51-7)

EAS is tested at starting Tj = 25℃ , L = 1.0mH, IAS = 6.5A, VDD = 50V, VGS = 10V

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