MDS1521 datasheet(1/5 Pages) MGCHIP

Part #	MDS1521

Description	Single N-channel Trench MOSFET 30V, 28.2A, 4.0m(ohm)

PDF	5 Pages

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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1 / 5 page

June. 2011. Version 1.2

MagnaChip Semiconductor Ltd

.

1

Absolute Maximum Ratings (Ta = 25

oC)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

(1)

TC=25

oC

ID

28.2

A

TC=70

oC

22.6

TA=25

oC

18.8

(3)

TA=70

oC

15.1

(3)

Pulsed Drain Current

IDM

40

A

Power Dissipation

TC=25

oC

PD

5.6

W

TC=70

oC

3.6

TA=25

oC

2.5

(3)

TA=70

oC

1.6

(3)

Single Pulse Avalanche Energy

(2)

EAS

223

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(1)

RθJA

50

oC/W

Thermal Resistance, Junction-to-Case

RθJC

22

MDS1521

Single N-channel Trench MOSFET 30V, 28.2A, 4.0m

Features

VDS = 30V

ID = 28.2A @VGS = 10V

RDS(ON)

< 4.0m

@VGS = 10V

< 5.5m

@VGS = 4.5V

100% UIL Tested

100% Rg Tested

General Description

The MDS1521 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality.

MDS1521 is suitable for DC/DC converter and

general purpose applications.

D

G

S

1(S)

2(S)

3(S)

4(G)

8(D)

7(D)

6(D)

5(D)

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