MDS1521 datasheet(2/5 Pages) MGCHIP

2 / 5 page

June. 2011. Version 1.2

MagnaChip Semiconductor Ltd

Ordering Information

Part Number

Temp. Range

Package

Packing

Quantity

Rohs Status

MDS1521URH

-55~150

SOIC-8

Tape & Reel

3000 units

Halogen Free

Electrical Characteristics (TJ = 25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250µA

1.3

1.9

2.7

Drain Cut-Off Current

IDSS

VDS = 30V, VGS = 0V

µA

TJ=55

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 15A

3.5

4.0

TJ=125

5.1

5.8

VGS = 4.5V, ID = 12A

4.5

5.5

Forward Transconductance

gfs

VDS = 5V, ID = 15A

Dynamic Characteristics

Total Gate Charge

Qg(10V)

VDS = 15.0V, ID = 15A,

VGS = 10V

26.8

38.3

50.0

Total Gate Charge

Qg(4.5V)

12.7

18.2

23.7

Gate-Source Charge

Qgs

7.6

Gate-Drain Charge

Qgd

13.3

Input Capacitance

Ciss

VDS = 15.0V, VGS = 0V,

f = 1.0MHz

1760

2514

3269

Reverse Transfer Capacitance

Crss

163

233

304

Output Capacitance

Coss

340

486

632

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 15.0V,

ID = 15A, RG = 3.0

9.3

Rise Time

24.0

Turn-Off Delay Time

td(off)

39.2

Fall Time

14.0

Gate Resistance

f=1 MHz

0.5

0.9

3.0

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 15A, VGS = 0V

0.81

1.1

Body Diode Reverse Recovery Time

trr

IF = 15A, dl/dt = 100A/µs

28.1

42.2

Body Diode Reverse Recovery Charge

Qrr

19.6

29.3

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 37.3A, VDD = 27V, VGS = 10V

3. T < 10sec.

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