MDS5652 datasheet(1/6 Pages) MGCHIP

Part #	MDS5652

Description	Dual N-Channel Trench MOSFET, 30V, 7.5A, 22m(ohm)

PDF	6 Pages

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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1 / 6 page

March. 2009. Version 0.0

MagnaChip Semiconductor Ltd

.

1

Absolute Maximum Ratings (Ta =25

oC unless otherwise noted)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Ta=25

oC

7.5

A

Continuous Drain Current

Ta=100

oC

ID

4.8

A

Pulsed Drain Current

IDM

30

A

Ta=25

oC

2.0

Power Dissipation

(1)

Ta=100

oC

PD

0.8

W

Single Pulse Avalanche Energy

(2)

EAS

12

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~+150

oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient(Steady-State)

(1)

RθJA

62.5

Thermal Resistance, Junction-to-Case

RθJC

50

oC/W

MDS5652

Dual N-Channel Trench MOSFET, 30V, 7.5A, 22m

General Description

The MDS5652 uses advanced MagnaChip’s MOSFET

Technology, which provides low on-state resistance, high

switching performance and exellent reliability.

Applications

Portable Equipment Applications

DC-DC Converter applications

General purpose applications

1(S1)

2(G1)

3(S2)

4(G2)

8(D1)

7(D1)

6(D2)

5(D2)

D1

G1

S1

D2

G2

S2

Features

VDS = 30V

ID = 7.5A @VGS = 10V

RDS(ON)

< 22m

@VGS = 10V

< 35m

@VGS = 4.5V

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MDS5652 Datasheet(PDF) 1 Page - MagnaChip Semiconductor.

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