ESDALC8-1BF4 datasheet(3/10 Pages) STMICROELECTRONICS

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ESDALC8-1BF4

Characteristics

Figure 3. Leakage current versus junction

temperature (typical values)

Figure 4. Junction capacitance versus applied

voltage (typical values)

Tj °C

()

IR ( nA)

0.1

100

125

150

V = V

= 9 V

RRM

direct and 6 V reverse

reverse

direct

C(pF)

0.0

5.0

10.0

15.0

20.0

25.0

30.0

35.0

40.0

0123456

F = 1 MHz

Vosc = 30 mV

direct and reverse

R ()

T = 25 °C

Figure 5. ESD response to IEC 61000-4-2

(+8 kV contact discharge)

Figure 6. ESD response to IEC 61000-4-2

(-8 kV contact discharge)

5 V/div

15 V

VCL: Peak clamping voltage

VCL :clamping voltage at 30 ns

VCL :clamping voltage at 60 ns

VCL :clamping voltage at 100 ns

34 V

21 V

18 V

20 ns/div

5 V/div

20 ns/div

-3 V

-29 V

-13

-16 V

VCL: Peak clamping voltage

VCL :clamping voltage at 30 ns

VCL :clamping voltage at 60 ns

VCL :clamping voltage at 100 ns

Figure 7. Dynamic resistance

Figure 8. S21 attenuation result measurements

IPP (A)

Positive

polarity

Negative

polarity

(V)

100k

10M

100M

10G

-39

-36

-33

-30

-27

-24

-21

-18

-15

-12

-9

-6

-3

ESDALC8-1BF4

S21 (dB)

F (Hz)

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