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BAS40W Datasheet(PDF) 1 Page - WILLAS ELECTRONIC CORP |
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BAS40W Datasheet(HTML) 1 Page - WILLAS ELECTRONIC CORP |
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1 / 5 page ![]() Maximum Ratings @Ta=25 ℃ Parameter Symbol Limit Unit Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR 40 V Forward continuous current IFM 200 mA Power dissipation PD 150 mW Thermal resistance junction to ambient RθJA 667 ℃/W Operating temperature TJ -55~+125 ℃ Storage temperature range TSTG -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reverse breakdown voltage V(BR) IR= 10μA 40 V Reverse voltage leakage current IR VR=30V 200 nA Forward voltage VF IF=1mA IF=40mA 380 1000 mV Diode capacitance CD VR=0,f=1MHz 5 pF Reverse recovery time t r r Irr=1mA, IR=IF=10mA RL=100Ω 5 ns SOT- PACKAGE PRIMARY CHARACTERISTICS PD 150mW IF 1mA VRRM 40V VF 380mV TJ Max 150℃ FEATURES MECHANICAL DATA Low Forward Voltage Drop Fast Switching 2014.11 www.willas.com.tw Rev. J04 Case:Molded plastic,SOT-323 Polarity:Shown above Terminals :Plated terminals, solderable per MIL-STD-750,Method 2026 Epoxy : UL94-V0 rated flame retardant THRU Moisture Sensitivity Level 1 |
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