8ETH03 datasheet(2/8 Pages) IRF

2 / 8 page

8ETH03, 8ETH03S, 8ETH03-1

Bulletin PD-20023 rev. C 09/01

www.irf.com

VBR, Vr

Breakdown Voltage,

300

I R = 100µA

Blocking Voltage

Forward Voltage

1.0

1.25

I F = 8A

0.83 1.00

I F = 8A, TJ = 125°C

Reverse Leakage Current

0.02

µA

V R = VR Rated

6.0

200

µA

T J = 125°C, VR = VR Rated

Junction Capacitance

V R = 300V

Series Inductance

Measured lead to lead 5mm from package body

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameters

Min Typ Max

Test Conditions

Max. Junction Temperature Range

- 65

175

°C

TStg

Max. Storage Temperature Range

- 65

175

RthJC

Thermal Resistance, Junction to Case

Per Leg

1.45

2.5

°C/W

RthJA

Thermal Resistance, Junction to Ambient Per Leg

RthCS

Thermal Resistance, Case to Heatsink

0.2

Weight

2.0

0.07

(oz)

Mounting Torque

6.0

Kg-cm

5.0

lbf.in

Thermal - Mechanical Characteristics

Typical Socket Mount

Mounting Surface, Flat, Smooth and Greased

Units

trr

Reverse Recovery Time

I F = 1A, diF/dt = -50A/µs, VR = 30V

-27-

TJ = 25°C

-40-

TJ = 125°C

IRRM

Peak Recovery Current

2.2

T J = 25°C

5.3

TJ = 125°C

Qrr

Reverse Recovery Charge

T J = 25°C

106

TJ = 125°C

Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)

F = 8A

diF /dt = - 200A/µs

VR = 200V

Parameters

Min Typ Max

Test Conditions

Units

Parameters

Min

Typ

Max

Units

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