STRH12P10ESY1 datasheet(1/12 Pages) STMICROELECTRONICS

Part #	STRH12P10ESY1

Description	Fast switching

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 12 page

March 2007

Rev 2

1/12

STRH12P10ESY3

P-channel 100V - 0.265

Ω - TO-257AA

Rad-hard low gate charge STripFET™ Power MOSFET

General features

■ Low RDS(on)

■ Fast switching

■ Single event effect (SEE) hardned

■ Low total gate charge

■ Light weight

■ 100% avalanche tested

■ Application oriented characterization

■ Hermetically sealed

■ Heavy ion SOA

■ 100kRad TID

■ SEL & SEGR with 34Mev/cm²/mg LET ions

Description

This Power MOSFET series realized with

STMicroelectronics unique STripFET process has

specifically been designed to sustain high TID

and provide immunity to heavy ion effects. It is

therefore suitable as power switch in mainly high-

efficiency DC-DC converters. It is also intended

for any application with low gate charge drive

requirements.

Application

■ Satellite

■ High reliability

Internal schematic diagram

Type

VDSS

STRH12P10ESY3

100V

TO-257AA

www.st.com

Order codes

Part number

Marking

Package

Packaging

STRH12P10ESY1 (1)

1.

Mil temp range

RH12P10ESY1

TO-257AA

Individual strip pack

STRH12P10ESY3 (2)

2.

Space flights parts (full ESA flow screening)

RH12P10ESY3

TO-257AA

Individual strip pack

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