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STRH12P10ESY1 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STRH12P10ESY1
Description  Fast switching
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STRH12P10ESY1 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STRH12P10ESY3
4/12
2
Electrical characteristics
(TCASE = 25°C unless otherwise specified)
2.1
Pre-irradiation
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
IDSS
Zero gate voltage drain
current (VGS = 0)
80% BVDss
10
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±18V
±
100
nA
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS = 0V
100
V
VGS(th)
Gate threshold voltage
VDS =VGS, ID = 1mA
24.5
V
RDS(on)
Static drain-source on
resistance
VGS = 12V, ID = 12A
0.265
0.3
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f=1MHz,
VGS=0V
1303
158
65.6
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 50V, ID = 6A,
VGS=12V
44
4.5
10
62
7
14
nC
nC
nC
RG
Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20mV
open drain
12
Ω
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 80V, ID = 12A,
RG = 4.7Ω, VGS = 12V
19
9
37
7
ns
ns
ns
ns



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