IRLMS6702 datasheet(2/8 Pages) IRF

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IRLMS6702

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Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain to Source Breakdown Voltage

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

0.005

V/°C Reference to 25°C, ID = 1mA

0.200

VGS = 4.5V, ID = 1.6A

0.375

VGS = 2.7V, ID = 0.80A

VGS(th)

Gate Threshold Voltage

0.70

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

1.5

VDS = 10V, ID = 0.80A

1.0

VDS = 16V, VGS = 0V

VDS = 16V, VGS = 0V, TJ = 125°C

Gate to Source Forward Leakage

100

VGS = 12V

Gate to Source Reverse Leakage

100

VGS = 12V

Total Gate Charge

5.8

8.8

ID = 1.6A

Qgs

Gate to Source Charge

1.8

2.6

VDS = 16V

Qgd

Gate to Drain ("Miller") Charge

2.1

3.1

VGS = 4.5V, See Fig. 6 and 9

td(on)

Turn On Delay Time

VDD = 10V

Rise Time

ID = 1.6A

td(off)

Turn Off Delay Time

RG = 6.0Ω

Fall Time

RD = 6.1Ω, See Fig. 10

Ciss

Input Capacitance

210

VGS = 0V

Coss

Output Capacitance

130

VDS = 15V

Crss

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

Ω

RDS(on)

Static Drain to Source On Resistance

IDSS

Drain to Source Leakage Current

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

p n junction diode.

VSD

Diode Forward Voltage

1.2

TJ = 25°C, IS = 1.6A, VGS = 0V

trr

Reverse Recovery Time

TJ = 25°C, IF = 1.6A

Qrr

Reverse RecoveryCharge

di/dt = 100A/µs

Source-Drain Ratings and Characteristics

1.7

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

SD ≤

1.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Notes:

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Surface mounted on FR 4 board, t ≤ 5sec.

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